t4 - lds - 0006 - 1, rev . 1 (11 1983 ) ?2011 microsemi corporation page 1 of 5 2N5114UB thru 2n5116ub available on commercial versions p- channel j - fet screening in reference to mil - prf - 19500 available description this low - profile surface mount device is available in military equivalents for high - reliability applications. microsemi also offers numerous other products to meet higher and lower pow er voltage regulation applications. ub package also available in : to - 18 package (leaded) 2n5114 C 2n5116 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent to jedec registered 2n5114 thru 2n51 16 series. ? low - profile ceramic surface mount package. ? screening in reference to mil - prf - 19500 is available. (see part nomenclature .) ? rohs compliant versions available (commercial grade only) . applications / benefit s ? low - profile ub package . ? lightweight. maximum ratings @ t c = +25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c gate - source voltage (1) v gs 30 v drain - source voltage v ds 30 v drain - gate voltage (1) v dg 30 v gat e current i g 50 ma steady - state power dissipation @ t a = +25 o c (2) p d 0.500 w notes : 1. symmetrical geometry allows operation of those units with source / drain leads interchanged. 2. derate linearly 3.0 mw/c for t a > +25c. downloaded from: http:///
t4 - lds - 0006 - 1, rev . 1 (11 1983 ) ?2011 microsemi corporation page 2 of 5 2N5114UB thru 2n5116ub mechanical and p ackaging ? case: ceramic . ? terminals: gold plating over nickel underplate. rohs compliant matte/tin available on c ommercial grade only. ? marking: part number, date code, manufacturers id. ? tape & reel option: standard per eia - 418d . consult factory for quantities. ? weight: < 0.04 grams . ? see p ackage d imensions on last page. part nomenclature mx 2n511 4 ub (e3) reliability level mq (reference jan) mx (reference jantx) mv (reference jantxv) blank = comme rcial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant surface mount package downloaded from: http:///
t4 - lds - 0006 - 1, rev . 1 (11 1983 ) ?2011 microsemi corporation page 3 of 5 2N5114UB thru 2n5116ub electrical charac teristics @ t a = +25 o c unless otherwise noted. parame t ers / te st co nditio ns symb ol min. max. un it gate -source breakdown volta ge v ds = 0, i g = 1. 0 a v (br ) gss 30 v drain - source on state volta ge v gs = 0 v, i d = - 15 ma v gs = 0 v, i d = - 7.0 ma v gs = 0 v, i d = - 3.0 ma 2n5114 ub 2 n5115 ub 2n5116 ub v ds(on) - 1.3 - 0.8 - 0.6 v gate reverse current v ds = 0, v gs = 20 v i gss 500 pa drain current c utoff v gs = 12 v, v ds = - 15 v v gs = 7.0 v, v ds = - 15 v v gs = 5.0 v, v ds = - 15 v 2n5114 ub 2n5115 ub 2n5116 ub i d(off) - 500 - 500 - 500 pa zero gate voltage drain current v gs = 0, v ds = - 18v v gs = 0, v ds = - 15 v v gs = 0, v ds = - 15v 2n5114 ub 2n5115 ub 2n5116 ub i dss - 30 - 15 - 5.0 - 90 - 60 - 25 ma gate -source cutoff v ds = -15, i d = - 1.0 na v ds = -15, i d = - 1.0 na v ds = -15, i d = - 1.0 na 2 n5114 ub 2n5115 ub 2n5116 ub v gs(off) 5.0 3.0 1.0 10 6.0 4.0 v dynam i c charact e ri st ics parame t ers / te st co nditio ns symb ol min. max. un it sm all -s ignal dr ain -s ource on s ta te resis t an ce v gs = 0, i d = - 1.0 ma 2n5114 ub 2n5115 ub 2n5116 ub r ds(on)1 75 100 175 sm all -s ignal dr ain -s ource on s ta te resis t an ce v gs = 0, i d = 0; f = 1 khz 2n5114 ub 2n5115 ub 2n5116 ub r ds(on)2 75 100 175 small- signal, common- source short - cir c uit reverse tr ansfer ca pa c ita n ce v gs = 12 v, v ds = 0 v gs = 7.0 v, v ds = 0 v gs = 5.0 v, v ds = 0 2n5114 ub 2n5115 ub 2n5116 ub c rss 7.0 pf small- signal, common- source sho rt-circuit in put ca p acita nce v gs = 0, v ds = - 15 v, f = 1.0 mhz 2n5114 ub , 2n5115 ub 2n5116 ub c iss 25 27 pf downloaded from: http:///
t4 - lds - 0006 - 1, rev . 1 (11 1983 ) ?2011 microsemi corporation page 4 of 5 2N5114UB thru 2n5116ub electrical characteristics @ t a = +25 o c unless otherwise noted. (continued) switch i ng charact er ist i cs parame t ers / te st co nditio ns symb ol min. max. un it turn - on delay time 2n5114 ub 2n5115 ub 2n5116 ub t d( on ) 6 10 25 s rise time 2n5114 ub 2n5115 ub 2n5116 ub t r 10 20 35 s turn - off delay time 2n5114 ub 2n5115 ub 2n5116 ub t d( off ) 6 8 20 s downloaded from: http:///
t4 - lds - 0006 - 1, rev . 1 (11 1983 ) ?2011 microsemi corporation page 5 of 5 2N5114UB thru 2n5116ub package dimensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh .046 .056 1.17 1.42 ls1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls2 .071 .079 1.81 2.01 bw .085 .108 2.16 2.74 lw 0.16 0.24 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r1 .012 .305 ll1 .022 .038 0.56 0.97 r2 .022 .559 ll2 .017 .035 0.43 0.89 notes: 1 . dimen sio ns are in in ch es. 2 . m illim eters are gi ven for ge ne ral in for ma t io n onl y. 3 . hat che d areas on pack ag e deno te metal li zed areas (tungsten with gold plating 60 micro inches minimum over 80 micro inches minimum nickel). 4 . pad 1 = drain , pad 2 = source , pad 3 = gate , pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th asme y 14 .5m, diame ters are eq uival en t to x sy mbolog y. downloaded from: http:///
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